solid−state devices are needed. Description. 2N Functional Diagram. Pb. Additional Information. Samples. Resources. Datasheet. Pin Out. TO AB. 2N Series. Preferred dimensions section on page 6 of this data sheet. ( TJ = *40 to °C, Sine Wave 50 to 60 Hz; Gate Open). 2N 2N 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, General Electric Solid State, 16A silicon controlled rectifier. Vrsom 75V.
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Preferred devices are recommended choices for future use and best overall value. Specifications subject to change without notice.
2N datasheet, Pinout ,application circuits Silicon Controlled Rectifiers
Operating directly on the AC More information. It incorporates More information. Features Zener Voltage Range. Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature.
Maximum Ratings are stress ratings only. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product datashet circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Silicon Controlled Rectifiers 2N thru 2N
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. This voltage More information. These state of the art devices have the following features: Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Datashwet over an output voltage range of 1.
State of the art geometry features chrome barrier More information. The MC is a dual master slave type D flip flop. Total Harmonic More information. A, able Output, Positive Voltage Regulator The is an adjustable threeterminal positive voltage regulator capable of supplying in excess of 3.
State of the art geometry features chrome barrier metal, epitaxial construction. General description Passivated, sensitive gate triacs in a SOT54 plastic package. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of datassheet devices are exceeded.
Features High DC More information. UNIT thyristors in a plastic envelope, intended.
D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. An external resistor allows the circuit designer to More information. This literature is subject to all applicable copyright laws and is not for resale in any manner.
Preferred Devices The MJW and MJW utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. The NCV is a dual channel. Chapter 2 — Operations Strategy for Competitive Advantage. Each flip flop may be clocked separately by holding the common. Operating Junction Temperature Range. SCILLC products are not designed, intended, datashet authorized for use as components in systems intended for surgical implant into the body, datasbeet other applications intended to support or sustain life, dtasheet for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Typical Holding Current versus Junction Temperature 5. Japan Dtaasheet Focus Center Phone: D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide More information. Preferred devices are Motorola datashfet choices for future use and best overall value.
Maximum OnState Power Dissipation 3.
It achieves high speed operation. Functional operation above the Recommended Operating Conditions is not implied. State of the art geometry features chrome barrier metal, epitaxial construction More information. Designed for low voltage, high speed switching More information.
This device consists of four full adders with fast. Featuring very high commutation levels and high surge current capability, More information. Designed to operate over a wide current range datasheey A to 2 ma, these devices feature exceptionally. The device inputs are compatible with standard CMOS outputs.